陳世翔（Shih-Hsiang Chen） 

職　　稱：專案助理教授

分　　機：(02)8209-3211分機5210

電子郵件：chensh@mail.lhu.edu.tw

學　　歷： 國立成功大學微電子工程研究所博士

研究領域：

半導體元件製程、系統化封裝、感測器元件、電阻式記憶體。

研究成果：

• S.X. Chen, S.P. Chang, W.K. Hsieh, S.J. Chang, and C.C. Lin, “Highly stable ITO/Zn₂TiO₄/Pt resistive random access memory and its application in two-bit-per-cell,” RSC Advances, 8, 17622-17628, 2018.
• S. X. Chen, S. P. Chang, S. J. Chang, W. K. Hsieh, and C. H. Lin, “Highly Stable Ultrathin TiO₂ Based Resistive Random Access Memory with Low Operation Voltage,” ECS Journal of Solid State Science and Technology, 7(7), Q3183-Q3188, 2018.
• C. P. Yang, S. P. Chang, S. J. Chang, S. X. Chen, M. H. Hsu, W. J. Tung, W. L. Huang, T. H. Chang, C. J. Chiu, and W. Y. Weng, “Bandgap Engineered Ultraviolet Photodetectors with Gallium-Zinc-Oxide via Co-Sputtering Method,” ECS Journal of Solid State Science and Technology, 7(7), Q3083-Q3088, 2018.
• S. X. Chen, S. P. Chang, and S. J. Chang, “Investigation of InN nanorod-based EGFET pH sensors fabricated on quartz substrate,” DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 9(4), 1505-1511, 2014.

研討會論文(Conference Paper)：

• SH Chen, SJ Young, CC Yang, YH Liu, “Highly stable BiFeO₃ RRAM with multilevel storage application” International Conference on Innovation, Communication and Engineering (ICICE 2023), Bangkok, Thailand, 71-72, 2023.
• S. X. Chen, S. P. Chang, and S. J. Chang, “Low-voltage operation of ultra thin TiO₂ resistive random access memory,” 10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/11th International Conference on Plasma-Nano Technology & Science (ISPlama2018/IC-PLANTS2018), AiChi, Japan, 64, 2018