林宗新（Tsung-Hsin Lin） 

職　　稱：副教授

分　　機：（02）8209-3211分機5220

電子郵件：f1213295@mail.lhu.edu.tw

研究領域：半導體材料、矽基元件與製程技術、薄膜與鍍膜技術、表面科學與改質。;

學歷：海洋大學材料工程研究所博士

擔任課程：

1. 生物科技導論

2. 高分子科學(一)

3. 材料分析技術

4. 半導體及光電材料製造技術

5. 創新與創業

研究成果：

1. 期刊論文

  國外期刊論文

• Chon-Hsin Lin, "A new Cu(NbCN_x) film and some of its characteristics." Microelectronic Engineering, 223, 111217 (2020).

• Chon-Hsin Lin, "Some aspects of new Cu(NbC) films." Bulletin of Material Science, 43, 1 (2020).

• Chon-Hsin Lin, " A new Cu(TiBN_x) alloy film for boosting the perwatt illuminance of high power LEDs." Japanese Journal of Applied Physics, 56, 01AB09 (2017).

• Chon-Hsin Lin, " New Cu(TiBN_x) copper alloy films for industrial Applications." Japanese Journal of Applied Physics, 55, 06JD02 (2016).

• Chon-Hsin Lin, " New Cu(AuTiN_x) copper alloy film and its features." Japanese Journal of Applied Physics, 55, 01AA13 (2016).

• Chon-Hsin Lin, " New Cu(GeN_x) film in barrierless metallization for LED heat dissipation. " Japanese Journal of Applied Physics, 54, 05ED04 (2015).

• Chon-Hsin Lin, " A new Cu(GeN_x) alloy film for industrial applications. " Japanese Journal of Applied Physics, 53, 11RC05 (2014).

• Chon-Hsin Lin, " A new Cu(TiIrN_x) film with fine thermal conductivity and its application. " Japanese Journal of Applied Physics, 53, 05GA01 (2014).

• Chon-Hsin Lin, " New Cu(TiIrN_x) Alloy Films for Solder Bump Flip-Chip Application. " Japanese Journal of Applied Physics, 52, 11NJ04 (2013).

• Chon-Hsin Lin, " A New Copper Alloy Film for Barrierless Si Metallization and Solder Bump Flip-Chip Application." Japanese Journal of Applied Physics, 52, 05FB01 (2013).

• Chon-Hsin Lin, Hsin-Yi Chuang, and C. Robert Kao, " Cu(TiWN_x) film as a barrierless buffer layer for metallization. " Japanese Journal of Applied Physics, 52, 01AC12 (2013).

• Chon-Hsin Lin, " A Thermally-reliable, Low-resistivity Cu(Ir) and Cu(IrN) alloy Films for Barrierless Cu Metallization. " Japanese Journal of Applied Physics, 51, 05EA05 (2012).

• Chon-Hsin Lin, " Cu(ReTaN_x) Copper Alloy Films Suitable for Electronic-Device Manufacturing-Process Simplification. " Japanese Journal of Applied Physics, 51, 01AC08 (2012).

• Chon-Hsin Lin, " New Copper Alloy, Cu(SnN_x), Films Suitable for More Thermally-stable, Electrically-reliable Interconnects and Lower Leakage-current Capacitors. " Japanese Journal of Applied Physics, 51, 05EA04 (2011).

• W.K. Leaua, J.P. Chu, C.H. Lin, " Interfacial reaction and electrical characteristics of Cu(RuTaN_x) on GaAs: Annealing effects. " Applied Surface Science, 257, 7286. (2011).

• J. P. Chu, W. Z. Chang, C. H. Wu, S. F. Wang, C. H. Lin, and C. W. Chang, " Electrical and structural properties of Sc-doped BaTiO₃ thin films. " Journal of The Electrochemical Society, 158, G39. (2011).

• C.H. Lin, W.K. Leau, C.H. Wu , " High-Performance copper alloy films for barrierless metallization. " Applied Surface Science, 257, 553. (2010). H.Y. Chuang, C.H. Lin, J.P. Chu, C.R. Kao , " Novel Cu–RuNx composite layer with good solderability and very low consumption rate. " Journal of Alloys and Compounds, 504, L25. (2010).

• Chon-Hsin Lin, Wen-Kuan Leau, and Cheng-Hui Wu, " Copper-Holmium Alloy Film For Reliable Interconnects. " Japanese Journal of Applied Physics, 49, 05FA03 (2010).

• C.H. Lin, W.K. Leau, and C.H. Wu , " The Application of Barrierless Metallization in Making Copper Alloy, Cu(RuHfN), Films for Fine Interconnects. " Journal of Electronic Materials, 39, 2441 (2010).

• L. F. Nie, X. N. Li, J. P. Chu, Q. Wang, C. H. Lin, and C. Dong, " High thermal stability and low electrical resistivity carbon-containing Cu film on barrierless Si. " Applied Physics Letters, 96, 182105 (2010).

• J. P. Chu, T. Y. Yu, C. H. Wu, C. H. Lin, S. F. Wang, and Q. Chen , " Ultrathin Diffusion Barrier for Copper Metallization: A Thermally Stable Amorphous Rare-Earth Scandate.  " Journal of The Electrochemical Society, 157, H384 (2010).

• J. P. Chu, C. H. Lin, P. L. Sun, and W. K. Leau , " Cu(ReN_x) for Advanced Barrierless Interconnects Stable Up To 730 °C. " Journal of The Electrochemical Society, 156, H540 (2009).

• C.H. Lin and W.K. Leau, " Copper-Silver Alloy for Advanced Barrierless Metallization. " Journal of Electronic Materials, 38, 2212 (2009). C. H. Wu, J. P. Chu, C. H. Lin, and S. F. Wang, " Electrical and Reliability

• Characteristics of Barrierless Cu-Based Contact for High Dielectric Constant Oxide Thin-Film Device Integration. " Journal of The Electrochemical Society, 156, G226 (2009).

• J.P. Chu, C.H. Lin, V.S. John, " Barrier-free Cu metallization with a novel copper seed layer containing various insoluble substances. " Vacuum, 83, 668 (2009).

• J. P. Chu, W. K. Leau, and C. H. Lin, " Interfacial reactions between Cu alloy and GaAs. " Applied Physics Letters, 93, 164104 (2008).

• J.P. Chu, C.H. Lin, W.K. Leau, and V.S. John, " Thermal Stability Study of Cu(MoN_x) Seed Layer on Barrierless Si. " Journal of Electronic Materials, 38, 100 (2008).

• J. P. Chu, C. H. Lin, V.S. John, " Cu films containing insoluble Ru and RuN_x on barrierless Si for excellent property improvements. " Applied Physics Letters, 91, 132109 (2007).

• J. P. Chu, C. H. Lin, " Thermal Stability of Cu(W) and Cu(Mo) Films for Advanced Barrierless Cu Metallization: Effects of Annealing Time. " Journal of Electronic Materials, 35, 1933 (2006).

• J. P. Chu, C. H. Lin, " Preparation and characterization of sputtered Cu films containing insoluble Nb. " Materials Chemistry and Physics, 100, 490 (2006).

• J. P. Chu, C. H. Lin, " Formation of a reacted layer at the barrierless Cu(WN)/Si interface. " Applied Physics Letters, 87, 211902 (2005).

• J. P. Chu, C. H. Lin, Y.Y. Hsieh, " Thermal Performance of Sputtered Insoluble Cu(W) Films for Advanced Barrierless Metallization. " Journal of Electronic Materials, 35, 76 (2006).

• J.P. Chu, Y.Y. Hsieh, C.H. Lin, T. Mahalingam, " Thermal stability enhancement in nanostructured Cu films containing insoluble tungsten carbides for metallization. " Journal of Material Research, 20, 1379 (2005).

• C.H. Lin, J.P. Chu, T. Mahalingam, T.N. Lin, S.F. Wang, " Sputtered Copper Films with Insoluble Mo for Cu Metallization: A Thermal Annealing Study. " Journal of Electronic Materials, 32, 1235 (2003).

• C.H. Lin, J.P. Chu, T. Mahalingam, T.N. Lin, S.F. Wang, " Thermal stability of sputtered copper films containing dilute insoluble tungsten: Thermal annealing study. " Journal of Material Research, 18, 1429 (2003).

2. 研討會論文

國外研討會論文

• Chon-Hsin Lin, " A New Cu (NbCN_x) Film And Its Characteristics. ", International Interconnect Technology Conference (IITC)-Materials For Advanced Metallization (MAM) IITC-MAM Conference (2019), Radisson Blu Royal Hotel，Brussels，Belgium.

• Chon-Hsin Lin, “Barrierless Cu-alloy Seed Integration for Improved Reliability in Solder Bump Flip Chip Applications.” TMS 148th Annual Metting & Exhibition 2019, 10-14 March, San Antonio, Texas, USA.

• Chon-Hsin Lin, “Development of a Cu-alloy Seed   Buffer Layer for Solder Bump Flip Chip Application..” TMS 147th Annual Meeting & Exhibition 2018, March 11-15, Phoenix, Arizona, USA.

• Chon-Hsin Lin, “New Cu(NbC) Films And Their Characteristics.” MAM Materials for Advanced Metallization Conference 2018, March 18-21, Milano, Italy.

• Chon-Hsin Lin, “New Cu(RuAgN_x) Copper Alloy Films for Medical     Applications.” The ISSP 14th International Symposium On Sputtering & Plasma Processe 2017, July 5-7, Kanazawa, Japan.

• Chon-Hsin Lin,, “Development of Cu-Alloy Films for Energy-Saving LED Applications.” TMS 146th Annual Meeting & Exhibition 2017, February 26 – March 2, San Diego, California, USA.

• Chon-Hsin Lin, “Reliability of Copper Alloy Film for Barrierless Si Metallization Applications.” 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 9th International Conference on Plasma-Nano Technology & Science 2016, March 6-10, Nagoya Univesity, Japan.

• Chon-Hsin Lin, “Development of Innovative Barrierless Cu-Alloy Films for Various Applications.” TMS 145th Annual Meeting & Exihibition 2016, February 14–18, DownTown Neshville, Tennessee, USA.

• Chon-Hsin Lin, “New copper-alloy film for industrial applicatins.” Advanced Metallization Conference 25th Asian Session 2015, September 16-18, Korea.

• Chon-Hsin Lin, “New Copper Alloy Film for Barrierless Si Metallization Applications.” 7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials/8th International Conference on Plasma Nano Technology & Science (ISplasma 2015/ IC-PLANTS 2015), March 9-14, Nagoya University, Nagoya, Japan.

• Chon-Hsin Lin, “Fabrication of Barrierless Cu-Alloy Film for Industrial Applications.” TMS 144th Annual Meeting & Exhibition 2015, March 15-19,Walt Disney World Swan and Dolphin Resort, Orlando, FL, USA.

• Chon-Hsin Lin, “New Cu(TiIrN_x) Copper-Alloy Film for Copper-Interconnect Applications.” ADMETA Plus 2014, Advanced Metallization Conference 2014 24th Asian Session IWAPS Joint Conference , Octo 23-24, Tokyo.

•  Chon-Hsin Lin, “A New Cu(ReTaN_x) Copper Alloy Film for Making Copper Interconnects.” ADMETA Plus 2013 (Advanced Metallization Conference 2013: 23rd Asian Session), Octo 21-23, Tokyo.

• Chon-Hsin Lin, “Cu Alloy film for reliable interconnects.” 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials) , January 28-February 1, Nagoya University, Japan.

• Chon-Hsin Lin, “New Cu(SnN_x) Alloy Film for Better Copper Interconnects.” Advanced Metallization Conference 2012: 22nd Asian Session (ADMETA plus 2012), Octo 22-25, Tokyo, Japan.

•  Chon-Hsin Lin, “Application of High-Performance, Advanced Barrierless Cu Alloy Film in Cu Metallization.” TMS 141st Annual Meeting and Exhibition 2012, March 11-15, Walt Disney World Swan and Dolphin Resort • Orlando, Florida, USA.

• Chon-Hsin Lin, “Making more reliable copper interconnects using barrierless Cu metallization., Advanced Metallization Conference 2011: 21st Asian Session, Sep. 12-15, Toyosu Campus, Shibaura Institute of Technology, Tokyo, Japan.

• Chon-Hsin Lin, “Making thermally-stable copper alloy films via barrierless metallization.” 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials ISPlasma 2011, March 6-9, Nagoya Institute of Technology, Nagoya, Japan.

•  C. H. Lin, J. P. Chu, W. K. Leau, “Thermal Performance of a New Cu Alloy Film for Advanced Interconnects., Advanced Metallization Conference 2010: 20th Asian Session, Oct.20-22, Tokyo, Japan.

•  C. H. Lin, J. P. Chu, C.H. Wu and W.K. Leau, “Development of Advanced Barrierless Interconnect Using Novel Cu Alloy Seed.” TMS 139^th Annual Meeting and Exhibition 2010, February 14-18, Washington State, Seattle, USA.

• C. H. Lin, J. P. Chu, C.H. Wu and W.K. Leau, “Advanced Barrierless Metallization for Cu interconnect Applications. Advanced Metallization Conference 2009: 19th Asian Session, Oct. 19-21, Sanjo Conference Hall, The Univ. of Tokyo, Tokyo, Japan.

• C. H. Lin, W.K. Leau and D.Y. Yu, “High-Performance copper seed layers for barrierless metallization. Thin Films IV”, Proceedings of The 10^th International Symposium on Sputtering & Plasma Processes (~ISSP 2009~), July 8-10, Kanazawa, Japan.

• J. P. Chu, C. H. Lin, W.K. Leau and D.Y.Yu, “Thermal Stability Properties of Various Vopper Alloy Films Used in Advanced Barrierless Cu Metallization.” TMS 138th Annual Meeting and Exhibition 2009, February 15-19, Moscone West Convention Center • San Francisco, California.

• Jinn P. Chu and C. H. Lin, High Performance Cu with Ru and RuN_x for Advanced Barrierless Metallization. IEEE International Interconnect technology Conference (IITC 2008), 1-4 June 2008, Burlingame, California.

•  J. P. Chu and C. H. Lin, Cu with insoluble MoN for advanced barrier-free metallization. TMS 137th Annual Meeting & Exhibition 2008, March 9-13, NEW ORLEANS, Louisiana, USA.

• Jinn P. Chu and C. H. Lin, Novel Cu Alloy Seed Layers for Barrierless Metallization. Semiconductor Technology (ISTC 2008), Editor: Ming Yang, the Proceedings of the 7th International Conference on Semiconductor Technology, Japan Society of Applied Physics – Silicon Technology Division, SEMI. 

3. 其他研討會論文

• C. H. Lin, "A New Copper Alloy Film Created for Barrierless Metallization." 台灣鍍膜科技協會年會(TACT 2012)暨國科會專題計畫研究成果發表會論文集，2012年11月9-10日，泰山明志科技大學。

• 林定言、張銓、朱瑾、林宗新， Characterization of Sputtered Amorphous HoScO₃ Film on Pt and Cu-based Electrodes. 台灣鍍膜科技協會年會(TACT 2010)暨國科會專題計畫研究成果發表會論文集。

• 林宗新、朱瑾 (2010, Dec). The Making of Cu(RuNx) and Cu(ReNx) Films via an Advanced Barrierless Cu Metallization Technique. 台灣鍍膜科技協會年會 (TACT 2010)暨國科會專題計畫研究成果發表會論文集。

• 林宗新、朱瑾，A Barrierless Metallization of Cu(MoN) Seed Layer on Liner Material For Interconnect Applications(論文佳作獎)。九十八年11月中國材料科學學會年會, 花蓮東華大學，民國九十八年研討會論文集。

• 林宗新、朱瑾，Barrierless Seed Layers for Cu Interconnects(論文優等獎)。中華民國鍍膜科技協會，2008年12月台灣鍍膜科技協會年會(AMTACT2008)— 鍍膜在能源與光電領域之應用暨國科會專題計畫研究成彰化明道大學。成果發表會論文集。

4. 專利

第一作者專利

•  抗菌銅鍍膜及其製備方法 中華民國發明專利I 659010 2019.02.01。

• 具有良好導熱性與照度的銅鍍層及其製備 中華民國發明專利I 597377號2017.09.01。

• 作為緩衝層之銅鍍層及其製作方法 中華民國發明專利I 464286號2014.12.11。

• 具有良好合金薄膜性質之銅鍍層及其製造方法 中華民國發明專利I 408244號2013.09.01。

• 具有良好合金薄膜性質之銅鍍層及其濺鍍合成方法   中華民國發明專利I 395829號2013.05.01。

• 具低電阻與良好接著強度之銅鍍層及其濺鍍合成方法 中華民國發明專利I 382102號2013.01.01。

合著獲證專利:

• 防止金屬遷移的電子封裝件 中華民國發明專利 I 419280號2009.01.01。

• 高溫穩定性佳的導電材料 中華民國發明專利 I 377582號。

• 無錫鬚晶的鍍層結構及其製造方法中華民國發明專利 I 364342號。

5. 研究計畫

擔任及主持政府相關計畫:

曾獲得個人與研究技術之獎項

• 林宗新、朱瑾，A Barrierless Metallization of Cu(MoN) Seed Layer on Liner Material For Interconnect Applications(論文佳作獎)。九十八年11月中國材料科學學會年會, 花蓮東華大學，民國九十八年研討會論文集。

• 林宗新、朱瑾，Barrierless Seed Layers for Cu Interconnects(論文優等獎)。中華民國鍍膜科技協會，2008年12月台灣鍍膜科技協會年會(AMTACT2008)— 鍍膜在能源與光電領域之應用暨國科會專題計畫研究成彰化明道大學。成果發表會論文集。

參加國際發明展

2016~2020年榮獲24面金牌、3面銀牌、16面特別

•  於2017.4.28與2018.4.12獲新北市朱立倫市長表揚貳次，2019.4.24獲新北獎市侯友宜市長表揚乙次。

• 於2017.6.6與2018.1.30分別獲苗栗縣鄧桂菊副縣長與徐耀昌縣長表揚乙次。

•  獲中華創新發明學會頒2017-2019 IIP國際傑出發明家獎-學術國光獎章，並分別於2018.3.16、2019.4.24、2020.7.7獲蔡英文總統、陳建仁副總統、 立 法院游錫堃院長表揚。