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經歷：

• 龍華科技大學半導體工程系助理教授
• 穩懋半導體先進微波及射頻研發中心協理
• 穩懋半導體 HBT 技術開發與客戶工程部門主管
• 美國伊利諾大學香檳分校訪問學者（Milton Feng 研究團隊）                                          

期刊論文:

1. Lin, D.-M.; Cheng-Kuo Lin; Huang, F.-H.; Wu, J.-S.; Wang, W.- K.; Tsai, Y.-Y.; Chan, Y.-J.; Wang, Y.-C.; “Dual-Gate E/E- and E/D-Mode AlGaAs/InGaAs pHEMTs for Microwave Circuit Applications” IEEE Transactions on Electron Devices, Vol. 54, pp. 1818–1824, 2007.

2. Huang, F.-H.; Cheng-Kuo Lin; Chan, Y.-J.; “V-Band GaAs pHEMT Cross-Coupled Sub-Harmonic Oscillator” IEEE Microwave and Wireless Components Letters, Vol. 16, pp. 473– 475, 2006.

3. C.H. Lin, W.K Wang, P.C. Lin, Cheng-Kuo Lin, Y.J. Chang, Y.J. Chan, “Transient pulsed analysis on GaN HEMTs at cryogenic temperatures,” IEEE Electron Device Letters, Vol. 26, pp. 710– 712, 2005.

4. C.C. Chen, C.Y. Chen, W.K. Wang, F.H. Huang, Cheng-Kuo Lin, W.Y. Chiu and Y.J. Chan, “Photonic crystal directional couplers formed by InAlGaAs nano-rods,” Optics Express, Vol. 13, pp. 38– 43, 2005.

5. Cheng-Kuo Lin, J.C. Wu, W.K. Wang, Y.J. Chan, and H.K. Chiou, “BCB-Bridged distributed SPST switch using 0.25-μm In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs,” IEEE Transactions on Electron Devices, Vol. 52, pp. 1–5, 2005.

6. W.K. Wang, P.C. Lin, C.H. Lin, Cheng-Kuo Lin, F.S. Huang, Y.J. Chan, G.T. Chen and J.I. Chyi, “Performance enhancement by using the n+-GaN cap layer and gate recess technology on the AlGaN/GaN HEMT fabrication,” IEEE Electron Device Letters, Vol. 26, pp. 5–7, 2005.

7. Wen-Kai Wang, Ching-Huao Lin, Po-Chen Lin, Cheng-Kuo Lin, Fan-Hsiu Huang, Yi-Jen Chan, Guan-Ting Chen and Jen-Inn Chyi, “Low-ka BCB passivation on AlGaN-GaN HEMT fabrication” IEEE Electron Device Letters, Vol. 25, pp. 763–765, 2004.

8. Cheng-Kuo Lin, Wen-Kai Wang, Ming-Jyh Hwu and Yi-Jen Chan, “A single step e-beam lithography for asymmetric recess and gamma gate in HEMT fabrication” J. Vac. Sci. Tech. B, Vol. 22, pp. 1723–1726, 2004.

9. Cheng-Kuo Lin, Jing-Cheng Wu, Wen-Kai Wang and Yi-Jen Chan, “Performance enhancement by the In0.65Ga0.35As pseudomorphic channel on the In0.5Al0.5As metamorphic buffer layer” IEEE Transactions on Electron Devices, Vol. 51, pp. 1214– 1217, 2004.

10. Wen-Kai Wang, Yo-Jen Li, Cheng-Kuo Lin, Yi-Jen Chan, G.T. Chen and Jen-Inn Chyi, “Low damage, Cl2-based gate recess etching for 0.3 μm gate-length AlGaN/GaN HEMT fabrication,” IEEE Electron Device Letters, Vol. 25, pp. 52–54, 2004.

11. Wen-Kai Wang, Cheng-Kuo Lin, Jing-Chang Wu and Yi-Jen Chan, “A new self-defined empirical large-signal model for enhancement-mode AlGaAs/InGaAs pHEMTs,” Solid State Electronics, Vol. 48, pp. 111–118, 2004.

12. Shu-Ming Lin, Fan-Hsiu Hunag, Cheng-Kuo Lin, Shih-Cheng Yang, Yi-Xiong Lin, Yu-Chen Yu and Yi-Jen Chan, “A novel 1.55 μm dual-mode SSO/MSM photodetector” IEEE Photonic Technology Letters, Vol. 15, pp. 1440–1442, 2003.

13. Hsien-Chin Chiu, Shih-Cheng Yang, Cheng-Kuo Lin, Ming-Jyh Hwu, and Yi-Jen Chan, “0.2-μm gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications,” IEEE Transactions on Electron Devices, Vol. 50, pp. 1599–1603, 2003.

14. Shih-Cheng Yang, Hsien-Chin Chiu, Ming-Jyh Hwu, Wen-Kai Wang, Cheng-Kuo Lin, and Yi-Jen Chan, “Submicron RIE Recessed InGaP/InGaAs Doped-channel FETs” IEEE Transactions on Electron Devices, Vol. 50, pp.1555–1558, 2003.

15. Chih-Wei Wang, Cheng-Kuo Lin, Shih-Cheng Yang, Yi-Jen Chan, Tine-Huat Gan, “A modified scalable large-signal rf model for quai-enhancement-mode AlGaAs/InGaAs pHEMTs” Solid- State Electronics, Vol. 47, Issue 5, pp. 907–912, 2003.

16. Cheng-Kuo Lin, Wen-Kai Wang and Yi-Jen Chan, “A new empirical large-signal model for enhancement-mode AlGaAs/InGaAs pHEMTs” Solid-State Electronics, Vol. 46, pp. 2135–2139, 2002.

17. Cheng-Kuo Lin and Yi-Jen Chan, “Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors” J. Vac. Sci. Tech. A, pp. 1048–1051, 2002.

研討會論文

1. J.-T. Chung, K.-L. Hsu, C.-T. Chang, K.-C. Feng, K.-Y. Lin, C.-H. Wu, J.-H. Li, S.-Y. Tu, T.-Y. Chou, S.-H. Tsai, and C.-K. Lin, “A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications,” 2025 IEEE/MTT-S International Microwave Symposium (IMS), San Francisco, CA, USA, pp. 564–567, 2025, doi: 10.1109/IMS40360.2025.11103828. (Best Industrial Paper Nomination Finalist)

2. L.-Y. Tseng, L.-C. Chang, J.-T. Chung, H.-T. Lin, S.-H. Tsai, and C.-K. Lin, “70 nm GaAs pHEMT for D-Band Power Amplifier Application,” 2024 GaAs MANTECH Technical Digest, Tucson, AZ, USA, 2024.

3. Wayne Lin, Wen-Hsin Wu, Chien-Rong Yu, Yu-Li Ho, Edison Chou, Jia-Jyun Guo, Che-Kai Lin, Wei-Chou Wang, Yu-Syuan Lin, and Cheng-Kuo Lin, “The 50V GaN HEMT with Memory Effect Suppression,” 2024 GaAs MANTECH Technical Digest, Tucson, AZ, USA, 2024. (The conference program lists the final author as “Cheng-Kao Lin”; corrected here to Cheng-Kuo Lin.)

4. Zong-Zheng Yan, Pei-Ying Wu, Rong-Hao Syu, Shi-Tsung Lin, Shu-Hsiao Tsai, Chang-Hwang Hua, Cheng-Kuo Lin, and Yu-Chi Wang, “Production Ready in Integration of 0.15 µm E/D Mode GaAs pHEMT by DUV 248 nm Stepper,” 2023 GaAs MANTECH Technical Digest, Orlando, FL, USA, 2023.

5. J.-T. Chung, C.-K. Lin, L.-Y. Tseng, C.-M. Chang, Y.-A. Liao, J.-H. Hsu, H.-T. Lin, and S.-H. Tsai, “III-V Semiconductor Devices on 6-inch Wafer for Sub-Terahertz Communications,” 2022 GaAs MANTECH Technical Digest, Monterey, CA, USA, 2022.

6. Shih-Kuei Chou, Yuan-Hsin Lin, Wen-Hsing Liao, Yu-Min Hsu, Chi-Hsiang Kuo, and Cheng-Kuo Lin, “Machine Learning-Based Methods for In-Time Monitoring Equipment Conditions,” 2022 GaAs MANTECH Technical Digest, Monterey, CA, USA, 2022.

7. Yong-Han Lin, Shuan-Ming Li, Sheng-Hsien Liu, Fan-Hsiu Huang, Cheng-Kuo Lin, and Yu-Chi Wang, “Improved Linearity GaAs pHEMT Technology and the Characterization of Its Third-Order Intermodulation Distortion,” 2020 GaAs MANTECH Technical Digest, pp. 167–170, 2020.

8. Cheng-Kuo Lin, Yu-An Liao, Chun-Wei Lin, Jung-Hao Hsu, and Shu-Hsiao Tsai, “Development of Manufacturable Commercial 6-inch InP HBT,” 2020 GaAs MANTECH Technical Digest, 2020.

9. S.-C. Cheng, J.-T. Chung, S.-H. Tsai, F.-H. Huang, C.-K. Lin, D. Williams, and Y.-C. Wang, “Advanced BiHEMT Technology with 0.25 µm Enhancement-Mode pHEMT for 5G Sub-6 GHz Power Amplifier Applications,” 2018 GaAs MANTECH Technical Digest, Austin, TX, USA, 2018.

10. J.-T. Chung, S. Takatani, C.-K. Lin, H.-T. Lin, S.-C. Cheng, S.-H. Tsai, C.-G. Yuan, J. S. M. Liu, and Y.-C. Wang, “ESD Protection Device for HEMT MMICs,” 2015 GaAs MANTECH Technical Digest, Scottsdale, AZ, USA, 2015.

11. Jung-Hao Hsu, Shu-Hsiao Tsai, Shih-Wei Chen, Kay Wu, Cheng-Kuo Lin, Dennis Williams, and Yu-Chi Wang, “An Integration of On-Chip High-Q Inductors by Cu Redistribution Layer (RDL) with Bumping for InGaP/GaAs HBT MMIC,” 2015 GaAs MANTECH Technical Digest, pp. 247–249, 2015.

12. Hsiu-Chen Chang, Shu-Hsiao Tsai, Cheng-Kuo Lin, Tim Hsiao, Steven Chou, Ju-Yung Chen, Pi-Hsia Wang, and Dennis Williams, “Device Characteristics Analysis of GaAs/InGaP HBT Power Cells Using Conventional Through-Wafer Via Process and Copper Pillar Bump Process,” 2013 GaAs MANTECH Technical Digest, pp. 153–156, 2013.

13. Shu-Hsiao Tsai, Rong-Hao Syu, Yu-Ling Chen, Wen-Fu Yu, and Cheng-Kuo Lin, “Layout Practices for Die Size Reduction on InGaP/GaAs HBT MMICs for Handset Power Amplifier Applications,” 2013 GaAs MANTECH Technical Digest, 2013.

14. Shu-Hsiao Tsai, Rei-Bin Chiou, Tung-Yao Chou, Cheng-Kuo Lin, and Dennis Williams, “A Ultra High Ruggedness Performance of InGaP/GaAs HBT for Multi-Mode/Multi-Band Power Amplifier Application,” 2012 GaAs MANTECH Technical Digest, 2012.

15. Bing-Shan Hong, Shu-Hsiao Tsai, Cheng-Kuo Lin, and Shinichiro Takatani, “Novel Bi-HEMT Technology for LTE Handset Application,” 2012 GaAs MANTECH Technical Digest, 2012.

16. Ju-Hsien Lin, Rei-Bin Chiou, Jung-Hao Hsu, Shu-Hsiao Tsai, Chia-Ta Chang, Chang-Ho Li, Tung-Yao Chou, Cheng-Kuo Lin, Dennis Williams, and Yu-Chi Wang, “The Study of InGaP/GaAs HBT for Ruggedness Characteristics,” 2011 GaAs MANTECH Technical Digest, 2011. Conference papers · 1

專利與榮譽

美國、臺灣及中國專利申請與獲證合計 39 件以上；2006 年獲第四屆許有壬科技論文獎。2025 IEEE IMS 論文「A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications」入圍最佳產業論文。